200912012-3 adva nced power electronics corp. 1/6 ap0904gh/j-hf-3 ?2013 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. g d s bv 40v fast switching characteristics r 10mw simple drive requirement low on-resistance rohs-compliant, halogen-free i 51 a g d s to-252 (h) d (tab) g d s to-251 (j) d (tab) o rdering information ap 0904 gh-hf-3 tr : in rohs-compliant halogen-free to-252 shipped on tape and reel ( 3000 pcs/reel) ap 0904 gj-hf-3 tb : in rohs-compliant halogen-free to-251 shipped in tubes (80pcs/tube) the ap 0904 gh-hf-3 is in the to-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power dc/dc converters. the through-hole to-251 version ( ap 0904g j-hf-3 ) is available where a small pcb footprint is required. symbol units v ds v v gs i d at t c =2 5 c i d at t c =10 0 c i dm p d at t c =2 5 c w /c t stg t j storage temperature range -55 to 1 50 c operating junction temperature range -55 to 1 50 c linear derating factor 0. 35 7 pulsed drain curren t 1 20 0 a total power dissipation 44.6 w continuous drain current 51 a continuous drain current 32 a drain-source voltage 4 0 gate-source voltage 20 v parameter rating symbol value units rthj-c maximum thermal resistance, junction-case 2.8 c /w rthj-a maximum thermal resistance, junction-ambient (pcb mount) 3 62.5 c /w parameter rthj-a maximum thermal resistance, junction-ambient 110 c /w
adva nced power electronics corp. 2/6 ap0904gh/j-hf-3 ?2013 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode notes: this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 1.pulse width limited by maximum junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v v gs =10v, i d =30a - - 10 mw v gs =4.5v, i d =20a - - 15 m w v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 45 - s i dss drain-source leakage current v ds =40v, v gs =0v - - 10 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =20a - 9 14.4 nc q gs gate-source charge v ds =20v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =20v - 6.5 - ns t r rise time i d =1a - 6.5 - ns t d(off) turn-off delay time r g =3.3w ,v gs =10v - 20 - ns t f fall time r d =20w 10 - ns c iss input capacitance v gs =0v - 680 1080 pf c oss output capacitance v ds =25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 95 - pf symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =10a, v gs =0 v , - 22 - ns q rr reverse recovery charge di/dt=100a/s - 16 - nc r ds(on) static drain-source on-resistance 2
adva nced power electronics corp. 3/6 ap0904gh/j-hf-3 ?2013 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0 20 40 60 80 100 024681 0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 20 40 60 80 100 120 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 8 9 10 11 12 13 24681 0 v gs , gate-to-source voltage (v) r ds(on) (mw ) i d =20a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
adva nced power electronics corp. 4/6 ap0904gh/j-hf-3 ?2013 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform typical electrical characteristics (cont.) t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =20v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on)
adva nced power electronics corp. 5/6 ap0904gh/j-hf-3 ?2013 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information: laser marking symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm product: ap0904 gh = rohs-compliant halogen-free to-252 0904gh ywwsss date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence e3 package code
adva nced power electronics corp. 6/6 ap0904gh/j-hf-3 ?2013 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.40 0.60 0.80 b2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 4.80 5.20 5.50 e 6.70 7.00 7.30 e1 5.40 5.60 5.80 e2 1.30 1.50 1.70 e ---- 2.30 ---- f 7.00 8.30 9.60 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information: symbols millimeters 0904gj ywwsss product: ap0904 package code a c1 a1 c e d e2 e1 e b1 b2 f d1 e date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence gj = rohs-compliant halogen-free to-251
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